Powercube Semi announced on the 15th that it exhibited a gallium oxide (Ga2O3)-based DUV sensor at CES 2025, which was held in Las Vegas, USA from January 8th to January 11th.
The gallium oxide sensor exhibited this time, unlike existing SiC (silicon carbide) and GaN (gallium nitride)-based sensors, applies technology that can detect only the wavelength of the UV-C range. This sensor, which boasts high optical response and low leakage current, is a product completed through three years of research and development based on the latest compound semiconductor process technology. Power Cube Semi plans to introduce the gallium oxide-based sensor for the first time in the world through CES 2025 and actively promote the excellence of the product to customers who require UV-C detection.
Gallium oxide (Ga2O3) has a wider bandgap characteristic than existing SiC and GaN devices, and is evaluated to have excellent power conversion efficiency. Due to this, gallium oxide is attracting attention as a third-generation semiconductor device, but there are no commercialized products yet. Power Cube Semiconductor has established the world's first gallium oxide manufacturing line by utilizing these characteristics, and is developing 1,200V high-voltage gallium oxide semiconductors for electric vehicles through collaboration with the Hyundai Motor Company Advanced Research Institute (IFAT) since 2021.
Powercube Semi also noted that gallium oxide can detect the Deep Ultraviolet region and plans to commercialize it as a fire prevention sensor. The technology also received New Excellent Technology (NET) certification in December 2024.
Taeyoung Kang, CEO of Power Cube Semi, expressed his ambition, saying, “Based on the DUV sensor, we will create the world’s first successful case in the gallium oxide market that has not yet been commercialized and contribute to the domestic production of next-generation semiconductors.”
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